The change and variations in electrical properties of the Se85Ge15- xInx amorphous thin film system before and after thermal annealing

M.M. El-Zaidia*, M. H. Wasfy**

Abstract


This paper studies the electronic properties of Theas prepared amorphous thin film system that constitutes Se85Ge15-xInx, with x = 0, 5, 10, 15 at %, where (x = 0, 5, 10, 15 at %). Besides, the same study was done on the similar system of samples after hardening them thermally at 380 K, and 490 K for an hour each. According to the results, there is a decrease in the activation energy of the samples that were annealed, the IN content, and the temperature of annealing increases and as a result, there is an increase in the electrical conductivity.

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